TPCS8302 2003-02-20 1 toshiba field effect transistor silicon p channel mos type (u-mosiii) TPCS8302 lithium ion battery applications notebook pc applications portable machines and tools small footprint due to small and thin package low drain-source on resistance: r ds (on) = 22 m ? (typ.) high forward transfer admittance: |y fs | = 1 2 s (typ.) low leakage current: i dss = ?1 0 a (max) (v ds = ? 20 v) enhancement-mode: v th = ? 0.5~ ?1 .2 v (v ds = ?1 0 v, i d = ? 200 a) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v dss 20 v drain-gate voltage (r gs 20 k ) v dgr 20 v gate-source voltage v gss 12 v dc (note 1) i d 5 drain current pulse (note 1) i dp 20 a single-device operation (note 3a) p d (1) 1.1 drain power dissipation (t 10 s) (note 2a) single-device value at dual operation (note 3b) p d (2) 0.75 w single-device operation (note 3a) p d (1) 0.6 drain power dissipation (t 10 s) (note 2b) single-device value at dual operation (note 3b) p d (2) 0.35 w single pulse avalanche energy (note 4) e as 32.5 mj avalanche current i ar 5 a repetitive avalanche energy single-device value at dual operation (note 2a, 3b, 5) e ar 0.075 mj channel temperature t ch 150 c storage temperature range t stg 55~150 c note: (note 1), (note 2), (note 3), (note 4), (note 5), please see next page. this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-3r1e weight: 0.035 g (typ.) circuit configuration 8 7 6 5 1 2 3 4
TPCS8302 2003-02-20 2 thermal characteristics characteristics symbol max unit single-device operation (note 3a) r th (ch-a) (1) 114 thermal resistance, channel to ambient (t 10 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 167 c/w single-device operation (note 3a) r th (ch-a) (1) 208 thermal resistance, channel to ambient (t 10 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 357 c/w marking (note 6) note 1: please use devices on condition that the channel temperature is below 150c. note 2: a) device mounted on a glass-epoxy board (a) b) device mounted on a glass-epoxy board (b) (a) (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values are shown for a single device (during dual operation, power is evenly applied to both devices.) note 4: v dd 16 v, t ch 25c, l 1.0 mh, i ar 5 a, r g 25 note 5: repetitive rating: pulse width limited by max channel temperature note 6: on lower right of the marking indicates pin 1. type s8302 fr-4 25.4 25.4 0.8 (unit: mm) fr-4 25.4 25.4 0.8 (unit: mm) lot no. weekly code: (three digits) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one low-order digits of calendar year)
TPCS8302 2003-02-20 3 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 10 v, v ds 0 v 10 a drain cut-off current i dss v ds 20 v, v gs 0 v 10 a v (br) dss i d 10 ma, v gs 0 v 20 drain-source breakdown voltage v (br) dsx i d 10 ma, v gs 12 v 8 v gate threshold voltage v th v ds 10 v, i d 200 a 0.5 1.2 v v gs 2.0 v, i d 2.5 a 42 95 v gs 2.5 v, i d 2.5 a 32 60 drain-source on resistance r ds (on) v gs 4.5 v, i d 2.5 a 22 35 m forward transfer admittance |y fs | v ds 10 v, i d 2.5 a 5.5 12 s input capacitance c iss 1590 reverse transfer capacitance c rss 380 output capacitance c oss v ds 10 v, v gs 0 v, f 1 mhz 430 pf rise time t r 9 turn-on time t on 16 fall time t f 45 switching time turn-off time t off duty 1%, t w 10 s 113 ns total gate charge (gate-source plus gate-drain) q g 28.5 gate-source charge 1 q gs 19 gate-drain (?miller?) charge q gd v dd
16 v, v gs 5 v, i d 5 a 9.4 nc source-drain ratings and characteristics (ta 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp 20 a forward voltage (diode) v dsf i dr 5 a, v gs 0 v 1.2 v r l 4 v dd
10 v 5 v v gs 0 v 4.7 i d 2.5 a v out
TPCS8302 2003-02-20 4 i d ? v ds i d ? v ds i d ? v gs v ds ? v gs |y fs | ? i d r ds (on) ? i d forward transfer admittance y fs (s) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) common source ta 25c, pulse test 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 2.5 v 2 v 1.8 v 1.6 v v gs 1.4 v 3 v 10 v 8 v 6 v 4 v common source ta 25c pulse test 10 v 0 0.4 0.8 1.2 1.6 2.0 0 4 8 10 16 20 8 v 6 v 4 v 3 v 2.8 v 2.6 v 2.4 v 2.2 v 2 v 1.8 v 1.6 v v gs 1.4 v 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2 2.4 ta 55c 100c 25c common source v ds 10 v pulse test 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 common source ta 25c pulse test 2.5 a i d 5 a 1.2 a common source v ds 10 v pulse test ta 55c 25c 100c 1 3 10 30 100 0.1 1 100 0.3 3 10 30 common source ta 25c pulse test v gs 2 v 2.5 v 1 10 100 3 30 4.5 v 0.1 1 10 0.3 3
TPCS8302 2003-02-20 5 r ds (on) ? ta i dr ? v ds capacitance ? v ds v th ? ta p d ? ta dynamic input/output characteristics drain power dissipation p d (w) gate threshold voltage v th (v) ambient temperature ta (c) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) drain-source voltage v ds (v) capacitance c (pf) ambient temperature ta (c) ambient temperature ta (c) drain-source voltage v ds (v) gate-source voltage v gs (v) total gate charge q g (nc) drain reverse current i dr (a) common source pulse test 0 10 20 30 40 50 60 70 80 80 40 0 40 80 120 160 v gs 2 v v gs 2.5 v v gs 4.5 v i d 5 a 2.5 a 2 a common source ta 25c pulse test 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 3 100 0.3 1 10 30 5 v 3 v 1 v 0 v v gs 1 v common source ta 25c v gs 0 v f 1 mhz c iss c oss c rss 100 1000 10000 10 30 300 3000 0.1 1 10 100 0.3 3 30 80 40 0 40 80 160 120 common source v ds 10 v i d 200 a pulse test 0 1.0 1.2 0.8 0.2 0.4 0.6 4 v common source i d 5 a ta 25c, pulse test 0 2 4 6 8 10 v dd 16 v 0 4 8 12 16 20 0 10 30 35 20 v ds 8 v 8 v 4 v v dd 16 v v gs (1) (4) (3) (2) 0 0.25 0.5 0.75 1.0 1.25 0 40 80 160 120 200 device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t 10 s
TPCS8302 2003-02-20 6 drain-source voltage v ds (v) drain current i d (a) pulse width t w (s) r th t w normalized transient thermal impedance r th (c/w) 0.001 0.01 0.1 1 10 100 1000 ( 1 ) ( 2 ) ( 3 ) ( 4 ) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t 10s 0.1 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 safe operating area 0.01 0.03 0.1 0.3 1 3 10 100 30 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 30 100 50 * single pulse ta 25c curves must be derated linearly with increase in temperature. i d max (pulse) * 10 ms * 1 ms * v dss max single-device value at dual operation (note 3b)
TPCS8302 2003-02-20 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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